Development of a Very Low-Noise Cryogenic Preamplifier for Large-Area SiPM Devices
نویسندگان
چکیده
منابع مشابه
On-Wafer, Cryogenic Characterization of Ultra-Low Noise HEMT Devices
Significant advances in the development of high electron-mobility field-effect transistors (HEMTs) have resulted in cryogenic, low-noise amplifiers (LNAs) whose noise temperatures are within an order of magnitude of the quantum noise limit (hf/k). Further advances in HEMT technology at cryogenic temperatures may eventually lead to the replacement of maser and superconducting–insulator– supercon...
متن کامل1 Low noise cryogenic electronics : preamplifier configurations with feedback on the bolometer
We developed preamplifier configurations used to readout resistive bolometers such as those based on Neutron Transmuted Doped Germanium thermometers (so called NTD Ge thermometers)[1] or NbSi thin film thermometers [2, 3]. We introduce the impedance regulating preamplifier configuration. This configuration, is compared to previously proposed readout configurations with feedback on the bolometer...
متن کاملLow noise cryogenic electronics : preamplifier configurations with feedback on the bolometer
We discuss the various electronic configurations one can use to readout resistive bolometers such as those based on Neutron Transmuted Doped Germanium thermometers (so called NTD Ge thermometers)[1] or NbSi thin film thermometers [2, 3]. The simple voltage amplifier configuration, is compared to readout configurations with feedback on the bolometer. Using the adiabatic thermal model of bolomete...
متن کاملEvaluation of large-area, low-noise, arrays of SiPMs.
Institute for Instrumentation in Molecular Imaging, I3M-CSIC, Valencia, Spain In this work we present the first evaluation results of an array of 12x12 SiPMs MicroFC-30035-SMT from SensL. These sensors are basically identical to those custom fabricated for the brain PET insert of the MindView project, except for the larger package. Both the C-Series and MindView parts are built with the same pr...
متن کاملLarge Area CMOS SPADs with very low Dark Counting Rate
We designed and characterized Silicon Single-Photon Avalanche Diodes (SPADs) fabricated in a high-voltage 0.35 μm CMOS technology, achieving state-of-the-art low Dark Counting Rate (DCR), very large diameter, and extended Photon Detection Efficiency (PDE) in the Near Ultraviolet. So far, different groups fabricated CMOS SPADs in scaled technologies, but with many drawbacks in active area dimens...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: IEEE Transactions on Nuclear Science
سال: 2018
ISSN: 0018-9499,1558-1578
DOI: 10.1109/tns.2018.2799325